Dr. Kanishka Biswas

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Patents

  1. Roychowdhury, S.; Ghosh, T.; Biswas, K., A lead-free p-type material, and implementations, 2019, Indian Provisional Patent (201941028467).
  2. Samanta, M.; Biswas, K., A tellurium-free n-type material and implementations, 2018, Indian Provisional Patent (201841034822).
  3. Kanatzidis, M. G.; Zhang, Q. C.; Girad, S.; Biswas, K., Thermoelectric composition comprising nanoscale inclusions in a chalcogenides matrix, 2010, U. S. Patent (12/882,580), PCT International patent (PCT/US2010/048881).